MX660x Image Transmission Transceiver Module 2wTDD Power Amplifier (33dBmPA) Features
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In TDD mode, the transceiver is integrated on the same circuit board. The internal RF transceiver and transceiver signals are separated by an analog switch chip, and the external RF interface is only one SMA interface
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2W power amplifier module link design with power amplifier tube and LNA, can be combined with CX660x baseband board design.
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Transmit gain 15dB, output power 33dBm, receive gain 13dB.
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2W power amplifier module structure design needs a separate power amplifier box, the complete product also needs external design of the whole shell, power supply, control signal input, RF connection, antenna interface, power amplifier heat dissipation, etc.
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The design of 2W power amplifier module only considers the realization of functions, and the functions of power amplifier working status, performance indicators, alarm information, and temperature characteristic compensation are not realized, which is not conducive to the indicators and quality control of power amplifier module production and testing and is not conducive to the response and processing of abnormal problems in field application.
MX660x Image Transmission Transceiver Module 2wTDD Power Amplifier (33dBmPA) Parameter
Description
- Model
- 2w TDD Power amplifier（33dBmPA）
Parameters
- Working frequency
- 1427MHz～1447MHz
- Transmit gain Max
- 15dB±1dB
- PowerMax
- 33dBm±2dB
- ACPR
- Offset 20M ≤-30dBc Offset 20M ≤-45dBc
- IMD3
- ≤-30dBc @2 tone
- Receive gain
- 13dB±1dB
Electrical specifications
- VSWR
- ≤1.5
- Power
- DC12V
- Auxiliary power supply
- DC5V
Physical specifications
- Dimensions(L*W*H)
- 59mm*41mm*4mm
- Weight
- 6.5g
- Working temperature
- -40℃ ~+85℃
