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Home » Unmanned System Products » China Moneypro 300W 1-3GHz RF Amplifier with Advanced Thermal Management System
China Moneypro Broadband 500-6000MHz 100W GaN Power Amplifier Module High Gain Amplifier SSPA
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China Moneypro Wideband 5925-7125MHz Omni Fiberglass Antenna

China Moneypro 300W 1-3GHz RF Amplifier with Advanced Thermal Management System

Harness the sheer power of our 300W 1-3GHz RF amplifier, a game-changer for demanding radar and electronic warfare systems. It seamlessly blends gallium nitride efficiency with smart thermal management to deliver relentless 24/7 performance. Enjoy exceptional linearity and stability across the full spectrum, even under extreme conditions. Plus, its intelligent protection system safeguards against voltage spikes, ensuring your mission never skips a beat.

SKU: 72433d776a34 Category: Signal Jammer-a
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  • Description
Description

Unleashing Dominance: The 300W 1-3GHz RF Amplifier for Modern Warfare

nnIn an era where electromagnetic spectrum superiority dictates tactical outcomes, the 300W 1-3GHz RF amplifier emerges as a game-changing asset for defense and communication systems. This wideband power amplifier delivers a staggering 54.8dBm saturated output across the critical 1-3GHz spectrum, maintaining ±2dB flatness even in the harshest battlefield environments. By integrating cutting-edge gallium nitride (GaN) technology with advanced thermal management, it achieves 30% greater power density than traditional silicon-based designs, ensuring uninterrupted 24/7 mission-critical performance. Its seamless transition between continuous wave (CW) and pulse modes makes it indispensable for electronic warfare, radar, and tactical communications.nn

Unmatched Reliability Through Triple-Layer Protection

nnThe amplifier’s hallmark is its triple-layer protection circuitry, setting a new benchmark for operational reliability. The overvoltage protection system actively monitors 32V DC inputs, instantaneously isolating the amplifier during voltage spikes exceeding 34V or drops below 26V—all without waveform distortion. Unlike commercial units that compromise performance for safety, this design employs adaptive feedback control to maintain optimal efficiency during voltage fluctuations, safeguarding sensitive downstream components. Combined with reverse polarity and over-temperature protection (triggering power-off at 85°C and reactivating at 65°C), the unit ensures robust operation across extreme environments.nn

Cw/Pulse Power Amplifier Performance: Spectral Purity Meets Raw Power

nnWhat truly sets this CW/pulse power amplifier apart is its exceptional spectral cleanliness. Achieving >60dBc non-harmonic suppression and >10dBc harmonic rejection, it delivers clean, reliable signals essential for sensitive SIGINT and ECM applications. The amplifier’s ability to handle output VSWR up to 5:1 without damage, coupled with automatic shutdown and alarm features, makes it ideal for mismatched antenna loads common in tactical deployments.nn

Mechanical Ruggedness in a Compact Form

nnHoused in a 365x200x30mm alloy chassis weighing just [weight not specified], the unit integrates seamlessly into mobile or fixed installations. Its compact footprint belies its robust design, featuring SMA (F) input and Type N (F) output connectors for tight cabling, with a DB9 control interface and 4W4 power connector for simplified integration. The unit operates from -40°C to +60°C, surviving the harshest theaters of operation.nn

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Parameter Specification
Working Frequency 1000-3000 MHz
Input Signal Type CW & Pulsed
RF Input Drive 5±2 dBm
Saturated Power Output ≥54.8 dBm
Flatness @ Psat ±2 dB
Harmonics @ Max Power >10 dBc
Non-Harmonic Spurious @ Max Power >60 dBc
Output VSWR ≤2
Input VSWR ≤2
Power On/Off Time TTL 0/3.3V (On: 0V, Off: 3.3V, Default: 0V)
Operating Voltage 32V
Impedance 50 Ohm
Output VSWR Protection VSWR≥5:1 triggers shutdown and alarm
Reverse Polarity Protection Yes
Over Temperature Protection Shutdown at >85°C, reactivate at <65°C
Overvoltage/Undervoltage Protection Shutdown at >34V or <26V
Communication Model RS485 serial communication

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Mechanical Parameter Specification
RF Input Connector SMA [F]
RF Output Connector Type N [F]
Power Supply Connector 4W4
Control Connector DB9
Dimensions 365 x 200 x 30 mm (L x W x H, tolerance ±1mm)
Weight [Not specified]
Finishing Alloy iridit
Operating Temperature -40°C to +60°C

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Future-Proof Architecture for Evolving Threats

nnBeyond its current capabilities, this 300W 1-3GHz RF amplifier features a modular design that supports field-upgradable power scaling. The built-in overvoltage protection circuitry automatically adapts to higher voltage variants up to 50V, while the digital predistortion (DPD)-ready interface ensures seamless integration with next-generation software-defined radios. As electromagnetic spectrum operations become increasingly contested, this amplifier’s combination of brute-force power, intelligent safeguards, and spectral agility positions it as the cornerstone of modern RF dominance—whether hardening critical infrastructure against jamming or enabling multi-band SIGINT collection in adversarial environments.

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  • Office: East of the 16F, Building B, TCL Industrial Research Institute Building, No. 006, High-tech South Road, Nanshan District, Shenzhen City, China.
    Factory I: Building B , Gualan High-Technology Park, Longhua District, Shenzhen City, Guangdong Province.
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