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Home » Unmanned System Products » China Moneypro 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier
China Moneypro 20-8000MHz Fixed Full-Band Directional Signal Jammer
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China Moneypro Ultra-Wideband 2-8GHz 50W High Gain Power Amplifier Module with GaN Technology High Gain SSPA

China Moneypro 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier

Get ready to experience game-changing RF performance with the 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier. This powerhouse delivers a massive 300W (55dBm) of continuous wave output, combining cutting-edge GaN technology with exceptional efficiency for your most demanding applications. With a low input VSWR of just 1.5:1, it ensures pristine signal quality and minimal energy loss, while its intuitive interface—featuring TTL high-level activation and straightforward control pins—makes setup a breeze. Built to thrive in harsh environments from -25 to +55°C, it’s the reliable, high-power workhorse your communication or radar system needs.

SKU: b7a43d2848d2 Category: Signal Jammer-a
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  • Description
Description

Unleashing Extreme Power: The 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier

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In the demanding world of high-end RF applications, power, efficiency, and reliability are non-negotiable. Enter the 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier, a technological marvel engineered to dominate the most challenging environments. By harnessing the unparalleled capabilities of advanced Gallium Nitride (GaN) HEMT technology, this amplifier delivers a breathtaking 55dBm (300W) of continuous wave (CW) power while maintaining exceptional efficiency. It is designed not just to generate power, but to sustain it reliably, providing a stable and robust RF energy source for critical systems. The 6-18G GaN CW High Power Amplifier is more than a component; it is a foundational building block for next-generation communications, radar, and electronic warfare platforms.

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Unmatched Performance in a Compact Package

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What sets this amplifier apart is its ability to balance brute force with refined control. Operating across the full 6 to 18 gigahertz spectrum, it handles the most complex and bandwidth-intensive signals with ease. Its CW operating mode ensures that high-power output is continuous and uninterrupted, making it ideal for applications that demand sustained RF energy. The amplifier’s impressive 300-watt output is achieved without sacrificing signal integrity, thanks to a remarkably low input VSWR of just 1.5:1. This minimizes reflections and energy loss, ensuring that virtually all the input power is converted into usable output. Furthermore, its compatibility with a 0±1dBm input power level streamlines integration into existing systems.

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Exceptional Thermal Management and Rugged Design

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High power generation inevitably leads to significant heat, but the 6-18G GaN CW High Power Amplifier is engineered to handle extreme thermal loads. Its robust design allows for stable operation across a wide temperature range from -25°C to +55°C, ensuring peak performance in arctic cold or desert heat. To achieve this, the unit requires mounting on a cold plate for contact-based heat dissipation, which efficiently wicks away thermal energy and safeguards long-term reliability. This thermal resilience, combined with its GaN HEMT architecture, guarantees a long operational lifespan even under continuous high-stress conditions.

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Comprehensive Specifications

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For engineers and system integrators, the following table provides all critical parameters for the 6-18G GaN CW High Power Amplifier:

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Parameter Value Unit Comments
Frequency Range 6-18 GHz
Output Power 55 dBm
Output Power (Watts) 300 W Calculated
Working Mode Continuous Wave
DC Connector D-SUB 8W8
Control Connector DB9
Input Power 0±1 dBm
Input VSWR 1.5:1
Output Connector WRD500D36
Input Connector SMA-50K
Temperature Range -25 to +55 °C
Supply Voltage +28 V Dual-channel

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Seamless Integration and User-Friendly Control

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Integration is straightforward with the amplifier’s comprehensive interface suite. It features an SMA-50K input connector and a WRD500D36 output connector, both industry standards for high-frequency applications. Power is delivered via a D-SUB 8W8 connector supporting a +28V dual-channel supply, while control is managed through a DB9 interface. The Enable pin responds to TTL high-level signals for activation, and the Bit pin functions at a normal high level for operational commands, providing simple and reliable control logic. This thoughtful design ensures that configuring and operating the 6-18G GaN CW High Power Amplifier is both intuitive and efficient.

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Versatile Applications Across Critical Sectors

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This powerful amplifier is not limited to a single use case. It excels in a wide variety of high-demand fields. In advanced communication systems, it boosts signal strength for long-range data links. In radar equipment, it provides the high-power output necessary for target detection and tracking over vast distances. Its stability and performance also make it ideal for electronic warfare, jamming, and test and measurement applications where precision and power are paramount. The amplifier’s core advantages—high power, high efficiency, and high stability—make it a critical supporting component in any system where RF performance cannot be compromised.

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Conclusion

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In summary, the 6-18GHz GaN HEMT 300W Continuous Wave High Power Amplifier sets a new standard for power and reliability in the RF industry. From its 300W CW output and exceptional efficiency to its rugged thermal design and user-friendly interfaces, every aspect of the 6-18G GaN CW High Power Amplifier is engineered for peak performance. Whether deployed in a cutting-edge radar system, a critical communication link, or a demanding test environment, this amplifier delivers the consistent, high-quality RF energy required for mission success. It is the definitive choice for engineers who demand nothing less than the best.

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